Ferromagnetism and microstructure in Cr implanted p-type (100) silicon

نویسندگان

  • L. J. Gao
  • L. Chow
  • R. Vanfleet
  • K. Jin
  • Z. H. Zhang
  • X. F. Duan
  • B. Xu
  • B. Y. Zhu
  • L. X. Cao
  • X. G. Qiu
  • B. R. Zhao
چکیده

The magnetic properties and microstructure of p-type Si (100) implanted with 1.0 × 1015 cm−2 of Cr ions at 200 keV have been investigated by a superconducting quantum interference device (SQUID) magnetometer, scanning electron microscope (SEM) and transmission electron microscopy (TEM). The magnetic hysteresis loops and saturation magnetization of 0.67–0.75 emu/g in a wide temperature range are observed in the as-implanted sample. Annealing of the as-implanted sample modifies the microstructure and therefore weakens the magnetic exchange interaction. TEM observations show that the as-implanted silicon layer is amorphous. After annealing at temperature ≥ 800 C, the SEM showed that the implanted profile layer became blurred and narrow, the ferromagnetism was weakened, which should have resulted from the re-crystallization of the implanted amorphous layer. These results were further compared with magnetic hysteresis observed in Mn-implanted silicon. © 2008 Elsevier Ltd. All rights reserved.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Ferromagnetism in Mn- and Cr-Implanted AlGaP

Implantation of Mn or Cr at doses of 3–5 10 cm 2 into Si-doped Al0:24Ga0:76P epilayers on GaP substrates produced ferromagnetic ordering at temperatures up to 300 K. The results were similar to those obtained previously in p-type AlGaP(C), indicating that both electron and hole-doped AlGaP can exhibit ferromagnetism. In addition, the AlGaP results are similar to those for GaP so the magnitude o...

متن کامل

Diffusion profiles of low dosages chromium ions implanted into (1 0 0) crystalline silicon

Chromium ions with low dosages (1 10 and 1 10 cm ) are implanted into silicon (1 0 0) crystalline substrates. Thermal anneals were carried out at different temperatures between 300 and 1000 1C to study the effects of ion implantation dose on the Cr diffusion profiles. Secondary ion mass spectrometry (SIMS) has been used to characterize the profiles of the Cr impurities. At 1 10 cm 2 dosage and ...

متن کامل

Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC

This work reports a nanoscale electro-structural characterisation of Ti/Al ohmic contacts formed on p-type Al-implanted silicon carbide (4H-SiC). The morphological and the electrical properties of the Al-implanted layer, annealed at 1700°C with or without a protective capping layer, and of the ohmic contacts were studied using atomic force microscopy [AFM], transmission line model measurements ...

متن کامل

Effect of Particle Volume Fraction on the Tensile Properties of Composite Al6061/SiC Materials by Hot Extrusion

In the present study the effect of phase volume fraction on the reinforcement of microstructure and tensile properties of composite extrusion process Al6061/SiC has been studied. For this purpose, the base alloy Al6061 using pure aluminum ingots, silicon, of Al-50% Mg, Al-10% Cr and a thin copper rod was prepared. Next, the composite Al6061/5% SiC, Al6061/10% SiC, Al6061/15% SiC and Al6061/20% ...

متن کامل

Redistribution of implanted species in polycrystalline silicon films on silicon substrate

Redistributions of implanted species after thermal annealing in polycrystalline silicon (poly-silicon) were studied by secondary ion mass spectrometry. Ten different elements were implanted into poly-silicon films grown on Si substrates. The implanted energies were chosen such that the expected ion range is within the poly-silicon film. Thermal anneals were carried out at temperatures between 3...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2008